Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VEĠ.15. SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 High Speed Saturated Switching Hermetic Surface Mounted Package. 75 VCeramic surface mount packageCollector-Emitter Voltage. Product Bulletin JANTX, JANTXV, 2N2222AUBSeptember 1996Surface Mount NPN General Purpose TransistorType JANTX, JANTXV, 2N2222AUBFeature Absolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Base Voltage. P2N2222AAmplifier TransistorsNPN SiliconFeatures These are Pb-Free Devices* RATINGS (TA =25C unless otherwise noted)Characteristic Symbol Value Unit2BASECollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc3Emitter-Base Voltage VEBO 6.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Devi See ordering information) Maximum Ratings
TRANSISTOR TT 2222 PDF FREE
MCC2N2222Micro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112N2222APhone: (818) 701-4933Fax: (818) 701-4939Features High current (max.800mA) Low voltage (max.40V) NPN Switching Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates TransistorsRoHS Compliant. MAXIMUM RATINGS: (TA=25C) SYMBOL UNITS Collector-Base Voltage VCBO 75 VCollector-Emitter Voltage VCEO 40 VEmitter-Base VoltageĠ.8. 2n2221a 2n2222a.pdf Size:116K _centralĭATA SHEET2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. Up to 100 krad(Si) low dose rateeDescriptionFigure 1. Theyare designed for high-speed switching applicationsat collector currents up to 500 mA, and feature use-ful current gain over a wide range ofĢN2222AHRHi-Rel 40 V, 0.8 A NPN transistorDatasheet - production dataFeaturesParameter ESCC JANS12 BVCEO min 40 V 50 V3IC (max) 0.8 A TO-1833hFE at 10 V - 150 mA 10041122 Hermetic packagesLCC-3UB ESCC and JANS qualifiedPin 4 in UB is connected to the metallic lid. They are designed for high speedswitching application at collector current up to500mA, and feature useful current gain over awide range of collector current, low leakageĠ.4.
40 V).1 emitteĢN2219A2N2222AHIGH SPEED SWITCHESPRELIMINARY DATADESCRIPTION The 2N2219A and 2N2222A are silicon PlanarEpitaxial NPN transistors in Jedec TO-39 (for2N2219A) and in Jedec TO-18 (for 2N2222A)metal case. 2n2222 2n2222a cnv 2.pdf Size:53K _philipsĭISCRETE SEMICONDUCTORSDATA SHEETM3D1252N2222 2N2222ANPN switching transistors1997 May 29Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors 2N2222 2N2222AFEATURES PINNING High current (max. MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2222A/DAmplifier TransistorsNPN SiliconP2N2222ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value UnitĠ.2.
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